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Giant Magneto Resistive Position Sensor
Version 1.0 Preliminary
GMR C6
This angle sensor is based on the Giant Magneto Resistive (GMR) technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features * GMR sensor in SMD package * Sensitive to the direction, not to the intensity of the magnetic field * Providing both sine and cosine signals from 1 chip * Constant TC of R and R Applications * Rotation and linear sensing with large air gaps * Angle encoders * Contactless potentiometers * Incremental encoders Pin Configuration*
3
B
2.9 0.1 1.9 0.6 +0.1 -0.05 6 5 4
2 ... 30 1.1 max 0.08 ... 0.15
0.1 0.3
A
2.6 max 10 max
10 max
0.1 max
M
1
2
3 0.2
0.35 0.15
0.3 -0.05
+0.1
0.25
M
B
0.20
A
Reflow soldering 0.8 0.3
1.2 3
A
1
4
B
0.5 0.45
Dimensions in mm
0.9
Directions of internal magnetization
GPW06957
2
5
*) Beware: This is the correct pin configuration. The pin configuration of GMR application note (10.98) is not actual anymore.
3, 5 (= 2) supply 1, 4 6 Type GMR C61)
1)
GMR bridge access not connected
Marking C
Ordering Code Q62705-K5005
GMR technology is qualified, GMR C6 is in qualification.
Data Sheet
1
2000-07-01
1.3 0.1
GMR C6
The GMR C6 is an angle sensor based on sputtered metallic multilayer technology. 4 resistors are monolithically integrated on 1 chip. Providing two halfbridges, if 2 external resistors are added. The outstanding feature of this magnetic sensor is the fact, that it is sensitive to the orientation of the magnetic field and not to its intensity as long as the field is in a range between 5 ... 15 kA/m. This means, the signal output of this sensor is independent of the sensor position relative to the magnet in lateral, axial or rotational direction in the range of several millimetres. Optimum results are achieved by using magnetic targets like permanent magnets or magnetic pole-wheels. There is no need for a biasing magnet! Due to the linear change of both, basic and field dependent part of the resistance vs. temperature, simple and efficient electronic compensation of TC (R, R) is possible.
1
AED02957
R )/2] RO
Bridge Voltage [(VO
N
0.5
Figure 1 Output Voltage of Half Bridges (V1, V4) as a Function of the Magnetic Field Orientation
Data Sheet
S
GMR C6
V4
0
V1
-0.5
-1
0
90
180
270 Angle
Deg
360
2
2000-07-01
GMR C6
Maximum Ratings Parameter Operating temperature Storage temperature Supply voltage Thermal conductivity Magnetic field 1)
1)
Symbol
Value - 40 ... + 150 - 50 ... + 150 7 >4 < 15
Unit C C V mW/K kA/m
TA Tstg V1 GthC A Hrot
larger fields may reduce the magnetoresistive effect irreversibly
Characteristics (TA = 25 C) Parameter Nominal supply voltage Basic resistance Magnetoresistive effect Hrot = 5 ... 15 kA/m Output signal halfbridge Symbol Value 5 > 700 >4 > 100 <8 + 0.09 ... + 0.12 - 0.12 ... - 0.09 - 0.27 ... - 0.23 Unit V % mV mV %/K %/K %/K
V1N R0
R/R0 @ V1N = 5 V VOUT
Offset voltage per halfbridge |V0| @ V1N = 5 V Temperature coefficient of basic resistance Temperature coefficient of magnetoresistance Temperature coefficient of magnetoresistive effect Application Hints
TCR0 TCR TCR/R0
The application mode of the GMR position sensor is preferably as a bridge or halfbridge circuit. This circuit compensates for the TC of the resistance value R0. To compensate for the TC of the GMR effect R/R0, if there is the necessity, is left to the application circuit and can be done for example with a NIC circuit. When operated over a complete 360 turn, two total signals of > 20 mV/V are achieved at 25 C with two halfbridges. In the case of linear position sensing, the electrical circuit remains unchanged, also providing two phaseshifted signals (i.e.sine and cosine).
Data Sheet
3
2000-07-01

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